国家/地区 台湾（7）
IPC部 H（5） C（4）
IPC大类 H01（5） C01（3）
IPC小类 C01B（3） H01M（2）
IPC C01B031/04（2） H01M004/36（2）
发明人 HWANG J（2） LIN C（2） WENG B（2）
WENG B J（2）
公开年
申请年
专利权人 NAT CHUNGSHAN INST SCI TECHNOLOGY（7）

Preparing silicon-carbon negative electrode material covered with double-layer carbon, comprises e.g. preparing silicon powder, solvent, dispersion, mixture of agent and zirconia beads, and adding nano-silicon powder into graphene.

CHEN B W, WENG B J, HWANG C H

Nitride transistor structure, has barrier layer arranged on channel layer, metal electrode module arranged on barrier layer, and gate arranged between source and drain, where carbon doping concentration of channel layer is greater than specific value.

LIN J C, KE W C, CHANG Y C, CHIANG C Y, CHANG K J, CHEN C T, LIU G S

Method for preparing nitrogen-doped porous graphene combined ultra-high capacitor.

CHANG C L, HUNG W C, CHANG J K, PAN B R

An apparatus for continuously growing large area of graphene transparent conductive film.

HUNG W, CHANG C

A preparation method of nano-graphite sheet precursor which can prepare the nano-graphite sheet precursor assisting in producing high-quality graphene sheet.

GEE C, YEH T, WANG P, LIN C, LI L, GEE C M, YEH T L, WANG P L, LIN C J, LIN C T, LI L J

Lithium ion secondary battery electrode material wherein the multilayer graphene is adhered on the electrode material powder.

WENG B, LIN C, KO P, BOR H, WANG C, KUO J, HWANG J

Method of producing nano-scaled graphene platelets mixing the vermicular graphite powder with the liquid solvent, curing the mixture and carrying out the mechanical refinement.

WENG B, HWANG J, WENG B J, HWANG J T