国家/地区 日本（2）
IPC部 C（2） H（2）
IPC大类 C01（2） C23（2） H01（2）
IPC小类 C01B（2） C23C（2）
IPC C01B032/182（2） C23C016/26（2）
发明人
公开年 2017（2）
申请年
专利权人 NAT INST ADVANCED IND SCI TECHNOLOGY（2）

Manufacture of nitrogen-doped graphene film used as conductive film, involves forming nitrogen-doped graphene film on base by irradiating base with plasma containing hydrocarbon, nitrogen, and oxygen having preset partial pressure.

OKIGAWA YUKI, YAMADA TAKATOSHI, ISHIHARA MASATOU, HASEGAWA MASATAKA

Method for manufacturing graphene film used in electronic device, involves blowing source gas containing carbon-type gas from nozzle on surface of base material, and carrying out forced diffusion of radical.

SAKAKIDA H, KIM J H