国家/地区 美国（3）
IPC部 B（2） C（2） H（2）
IPC大类 C01（2） H01（2）
IPC小类 C01B（2） H01L（2）
IPC C01B031/02（2） H01L029/06（2）
发明人
公开年 2014（2）
申请年 2013（3）
专利权人 NAT INST ADVANCED IND SCI TECHNOLOGY（3）

Wiring structure used for semiconductor device e.g. large scale integration, comprises carbon nanotubes and graphene, which are connected electrically through metal block.

SATO S, KONDO D, SATO M, NIHEI M, KONDO T

Sheet material, useful for producing a graphene sheet structure to fabricate FET, comprises structures of graphene oxide and graphene, where the graphene oxide and the graphene are chemically connected to form a plane.

MIYAMOTO Y

Electronic apparatus e.g. transistor, has protective film consisting of transition metal oxide that is formed on graphene film which is formed on insulating substrate, and insulating layer formed on protective film with electrode.

YAMAGUCHI J