国家/地区 韩国（2）
IPC部 H（2）
IPC大类
IPC小类
IPC
发明人 KIM J（2）
公开年 2023（2）
申请年 2022（2） 
专利权人 POSTECH ACADIND FOUND（2）

Non-volatile memory device comprises word lines extending in first direction on substrate, and channel pattern provided between first bit line and second bit line of each of bit line pairs on blocking insulating film, where channel pattern has ambipolar conduction characteristic.

PARK K, KANG S, JUNG S, PARK J, JO J, KIM J, SONG W, KANG S H, HYOUNG C J

Attachable microphone for microphone array, has substrate having back chamber with first tubular hollow, and first frame member surrounding back chamber and containing first polymer or inorganic material; and back plate unit.

CHO K, MOON W, LEE S, KIM J, CHO K W, MOON W K, KIM J S