国家/地区 韩国（2）
IPC部 C（2）
IPC大类 C01（2） H01（2）
IPC小类 C01B（2）
IPC H01L021/265（2）
发明人
公开年
申请年
专利权人 POSTECH ACADIND FOUND（2）

Manufacturing semiconductor useful in filed of power conversion devices, electric and electronic systems, comprises e.g. implanting dopant into semiconductor, capping material into two-dimensional honeycomb, and heat treating.

KIMSEONGJUN, KANG M J, SHIN H K, LEE N S, JAE P Y, SUNG M J

Manufacturing method of silicon carbide semiconductor device, involves forming protective layer on silicon carbide substrate into graphene, activating impurity, and removing protective layer.

KYEONG K C