国家/地区 韩国（3） 美国（2） 世界知识产权组织（2）
IPC部 H（3）
IPC大类 H01（2）
IPC小类
IPC
发明人 KIM J（3）
公开年 2023（2）
申请年 2022（2） 
专利权人 POSTECH RES BUSINESS DEV FOUND（3）

Non-volatile memory device comprises word lines extending in first direction on substrate, and channel pattern provided between first bit line and second bit line of each of bit line pairs on blocking insulating film, where channel pattern has ambipolar conduction characteristic.

PARK K, KANG S, JUNG S, PARK J, JO J, KIM J, SONG W, KANG S H, HYOUNG C J

Attachable microphone for microphone array, has substrate having back chamber with first tubular hollow, and first frame member surrounding back chamber and containing first polymer or inorganic material; and back plate unit.

CHO K, MOON W, LEE S, KIM J, CHO K W, MOON W K, KIM J S

Synthesis of transition metal electrochemical catalyst for forming electrode, involves dissociating nitrogen precursor and transition metal precursor in polyol-based solvent, mixing with support, heat-treating, and performing acid treatment.

KIM J K, SUNG Y E, LEE K S, KIM M J, KIM S J, KIMJAEKUK, SUNG Y, JIN C, KIM M, LI G, KIM J