国家/地区 美国（3）
IPC部 H（3）
IPC大类 H01（2）
IPC小类
IPC
发明人 SHIN H（2）
公开年 2023（3）
申请年 2023（3）
专利权人 SAMSUNG ELECTRONICS CO LTD（3）

Graphene structure for use in semiconductor device, comprises substrate, graphene on surface of substrate, and bonding region, where material of substrate and carbon of the graphene are covalently bonded, between surface of substrate and graphene, where bonding region has silicon carbide.

JUNG A, LEE C, SHIN K, KIM C, SHIN H, SONG H, BYUN K, LEE E

Electronic device e.g. semiconductor memory device, for use in memory system, has gate oxide layer formed between resistance switching layer and gate, source and drain that are arranged on switching layer and spaced apart from each other, and color filter arranged on switching layer.

SHIN H, KIM H, HINTON H J, LIU C, HAM D, JANG H, LEE M

All All-solid-state secondary battery, preferably lithium battery, comprises anode active material layer on anode current collector, and metal layer formed between anode active material layer and anode current collector, where metal layer comprises lithium or lithium alloy.

AIHARA Y, YAMADA T, YASHIRO N, SUZUKI N