国家/地区 中国（2）
IPC部
IPC大类
IPC小类
IPC
发明人 DI Z（2）
公开年 2023（2）
申请年 2023（2）
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（2）

Transferring graphene involves growing graphene layer on substrate, depositing stress layer on graphene layer, spin-coating bonding glue on stress layer, attaching rigid substrate, peeling rigid substrate followed by performing Vander Waals bonding on laminated structure, and etching stress layer.

TIAN Z, XUE Z, ZHANG M, DI Z, JIANG H

Preparing radio frequency transistor with self-aligned structure comprises growing graphene layer on upper surface of substrate, spin coating two photoresist, depositing aluminum and gold form self-aligned structure, spin coating transfer glue, attaching transition substrate and cleaning.

XUE Z, TIAN Z, ZHANG M, DI Z, JIANG H