国家/地区 中国（3）
IPC部 C（3）
IPC大类 C30（2）
IPC小类 C30B（2）
IPC
发明人 WU T（3）
公开年 2015（3）
申请年 2015（2） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（3）

Method for preparing graphene-boron nitride hetero-junction, involves heating and removing heat release adhesive tape to obtain graphene-boron nitride hetero-junction.

CHEN J, LU G, WU T, ZHANG X, WANG H

In-situ growth of graphene-based field effect transistor micro zone heating materials, comprises preparing graphene-based field effect transistor, applying voltage on ends of graphene electrode and allowing the growth of the material layer.

DENG L, HE L, JIANG M, LI L, XIE X, WU T, XIE H, WANG H, CHEN L

Preparation of graphene film comprises providing insulating substrate, placing in growth chamber, heating, introducing gas containing catalytic element, reacting, and introducing carbon source.

DING G, JIANG M, LU G, XIE X, TANG S, WU T, XIE H, ZHANG X, JIANG D, WANG H