国家/地区 中国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 SHANG E（2）
公开年 2016（2）
申请年 2015（2） 
专利权人 SHANGHAI INTEGRATED CIRCUIT RES DEV CE（2）

High sensitivity UV light detector, has semiconductor substrate formed with graphene channel that is formed with gate oxide layer, and graphene channel provided with organic thin film, coupling source electrode and leakage electrode.

CHEN S, HU S, SHANG E

Graphene organic thin-film composite structure light trigger nonvalatile storage device, has doped organic thin film connected with two sides of power source pole, and grid electrode and source drain electrode connected with erasing circuit.

CHEN S, HU S, SHANG E