国家/地区 美国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人
公开年 2014（2）
申请年 2014（2）
专利权人 STMICROELECTRONICS SRL（2）

Method for coupling graphene layer and doped silicon substrate of electronic device e.g. transistor, involves providing solvent layer on hydrophilic surface of doped silicon substrate, and depositing graphene layer on solvent layer.

SPARTA N G, TRINGALI C, LOVERSO S, RAVESI S, ACCARDI C, GIANNAZZO F

Microstructure device e.g. integrated circuit device of semiconductor device, has intermediate heat transfer layer which is positioned between surface of substrate and microstructure device chip and is provided with graphene flakes.

SCURATI M G, CERIATI L, BENINI L