国家/地区 美国（3）
IPC部 H（3） B（2）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L029/16（2）
发明人
公开年 2014（3）
申请年 2014（2） 
专利权人 STMICROELECTRONICS SRL（3）

Method for coupling graphene layer and doped silicon substrate of electronic device e.g. transistor, involves providing solvent layer on hydrophilic surface of doped silicon substrate, and depositing graphene layer on solvent layer.

SPARTA N G, TRINGALI C, LOVERSO S, RAVESI S, ACCARDI C, GIANNAZZO F

Microstructure device e.g. integrated circuit device of semiconductor device, has intermediate heat transfer layer which is positioned between surface of substrate and microstructure device chip and is provided with graphene flakes.

SCURATI M G, CERIATI L, BENINI L

Cellular automata assembly, useful in electronic device for processing signal, comprises basic cells that comprise graphene layers used to induce coupling field distributions and interact to each other to determine a logic state of signal.

PORTO D