国家/地区 日本（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 KATO D（2）
公开年
申请年
专利权人 TOKYO ELECTRON LTD（2）

Semiconductor device has interlayer insulating film which contains base material containing silicon oxide and hollow particles dispersed in base material, and hollow particle which is insulator having three-dimensional network structure.

NI Z Y, KATO D

Organic-semiconductor film used for channel in transistor structure, has pseudo graphene structure including two-dimensional network structure which is formed continuously.

KAGAYA M, MATSUMOTO T, KATO D, KATO T