国家/地区 日本（2）
IPC部 C（2） H（2）
IPC大类 C01（2） H01（2）
IPC小类 C01B（2） H01L（2）
IPC C01B031/02（2）
发明人
公开年 2015（2）
申请年 2015（2） 
专利权人 TOKYO ELECTRON LTD（2）

Processing of to-be-processed material for electronic device, involves forming resist mask on graphene film of to-be-processed material and remove resist residue on graphene film by exposing to-be-processed material to oxygen radicals.

KAGAYA MUNEHITO, KAGAYA M

Graphene machining method used to prevent graphene edges from collapsing while preventing electric charges from remaining in a graphene ribbon, comprises irradiating gas cluster beam onto graphene.

MATSUMOTO T, DOBASHI K