国家/地区 美国（2）
IPC部 B（2） H（2）
IPC大类 B01（2） H01（2）
IPC小类 B01J（2） H01L（2）
IPC B01J023/755（2） H01L021/768（2） H01L023/532（2）
发明人 MATSUMOTO T（2）
公开年 2016（2）
申请年 2015（2） 
专利权人 TOKYO ELECTRON LTD（2）

Patterning component designed to contact with substrate having graphene oxide film used in wirings of damascene structure of semiconductor device, consists of metal layer with pattern formed on patterning component.

MATSUMOTO T, KASHIWAGI Y

Forming method of base film for graphene, involves heating substrate to temperature at which impurities are eliminated as gas, and heating substrate to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R