国家/地区 中国（4）
IPC部 C（2） H（2）
IPC大类
IPC小类
IPC
发明人
公开年 2023（4）
申请年 2022（4） 
专利权人 UNIV ANHUI（4）

Method for preparation of quantum dot graphene indium gallium oxide thin film transistor, involves spin coating indium-gallium oxide precursor solution containing graphene quantum dot on surface of zirconium oxide gate dielectric layer.

WANG W, WANG L, XU X, HE G

Preparing high polymer composite graphene aerogel useful in e.g. high-efficiency shielding electromagnetic interference of electronic device, comprises stirring oxidized graphene suspension in alkaline medium for reduction, performing hydrothermal reaction, freezing and drying graphene hydrogel.

YANG J, MENG X, WANG J

Broadband infrared absorber has first layer of graphene-black phosphorus dual-mode structure, second layer of graphene-black phosphorus dual-mode structure and third layer of graphene-black phosphorus dual-mode structure that are covered.

HUANG Z, WANG Q, YANG L, ZHANG Y, WANG X, FENG N

Preparing high dispersing carbon dioxide hydrogenation catalyst by using copper iron oxide doped graphene oxide as precursor used as carbon dioxide hydrogenation liquid fuel catalyst, comprises e.g. mixing iron salt and copper salt in solvent, and stirring graphene oxide added with suspension.

CAI M, GUO L, SUN S, ZHANG Z, WEI Y