国家/地区 中国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 CHEN Y（2） LI Y（2） LIU X（2）
WANG Z（2）
公开年 2010（2）
申请年 2010（2） 
专利权人 UNIV CHINA ELECTRONIC SCI TECHNOLOGY（2）

Graphene field effect transistor comprises a substrate gate, a lower gate dielectric material, graphene, a source and a drain electrode, where the lower gate dielectric material is positioned on the surface of the substrate gate.

LI Y, LIU X, CHEN Y, WANG Z, HAO X

Transferring of graphene thin film for graphene semiconductor device involves coating organic colloid layer on surface of graphene thin film through spin coating and drying organic colloid layer coated on surface of graphene tin film.

CHEN Y, LIU X, LI Y, WANG Z