国家/地区 中国（5）
IPC部 C（5）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B031/02（2） C01B031/04（2）
发明人 LI Y（2） LIU Z（2） WANG J（2）
公开年 2009（3）
申请年 2009（5）
专利权人 UNIV PEKING（5）

Preparation of graphene film involves plating carbon-containing metal, forming metal film, providing obtained silicon substrate, plating with metal film in vacuum annealing furnace and etching silicon substrate.

LIU N, FU L, LIU Z

New graphene doped with nitrogen atom used for catalyst carrier, lithium ion battery and conductive film, is prepared by using direct-current electric arc process.

GU Z, LI N, SHI Z, WANG Z

Preparation of graphene involves reacting carbon nanotube and oxidant with ionic liquid at normal dispersion mode.

LI Y, PENG F, WANG J

Cutting graphene for developing flexible electronic surfaces involves constructing raised titanium dioxide nanometer structural layer on quartz substrate to obtain titanium dioxide mask, contacting with graphene sheet, and irradiating.

LIU Z, ZHANG L

Preparation of graphene involves reacting sodium metal and halogenated hydrocarbon as raw materials in solvent in inert environment.

LI Y, WANG J