国家/地区 美国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类
IPC
发明人
公开年
申请年 2009（2）
专利权人 UNIV TEXAS SYSTEM（2）

Semiconductor device comprises a dielectric layer on silicon base layer, graphene layer, and one of a metal and semiconductor layer which acts as a nucleation layer for the graphene layer.

BANERJEE S, COLOMBO L, KIM S, TUTUC E

Electrochemical device used for hybrid power system, has chemically modified graphene sheet which is arranged in at least portion of chemically modified graphene electrode.

RUOFF R S, STOLLER M