国家/地区 中国（3）
IPC部 C（2） H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC H01L031/18（2）
发明人 FENG X（3）
公开年 2018（2）
申请年
专利权人 UNIV XIAN POLYTECHNIC（3）

Preparing flexible graphite-based silicon nanowire heterojunction comprises e.g. covering graphene substrate with 2 nm thick gold on CVD furnace and turn on the mechanical pump to evacuate.

LI L, ZANG Y, CHEN H, HU J, LIN S, ZHANG G, PU H, FENG X, SONG L, TU Z, LI Z, XU Y, WANG R

CVD graphene dry transferring process comprises e.g. preparing polyvinyl pyrrolidone and polyvinyl alcohol gel; cutting required size of graphene/copper foil, placing in sealed deionized water, heating water bath, and spin-coating.

LI L, ZANG Y, HU J, LIN S, HE X, CHU Q, FENG S, PU H, FENG X, SONG L, LEI Q, TU Z

Silicon carbide/crystal germanium/graphene hetero-junction photoelectrical device has graphene layer, crystal germanium film layer and single crystal silicon carbide substrate that are connected to two electrodes from upper to lower.

LI L, ZANG Y, SONG L, PU H, FENG X, TU Z, HAN Y, CHU Q, HU J, LIN S, HE X, FENG S, LEI Q