国家/地区 美国（2）
IPC部 B（2） H（2）
IPC大类 B82（2） H01（2）
IPC小类 B82Y（2） H01L（2）
IPC
发明人 KUB F J（2）
公开年 2012（2）
申请年
专利权人 US SEC OF NAVY（2）

Forming graphene material on surface by implanting carbon into metal material layer disposed on substrate so that graphene forms on top and bottom surfaces of the layer, removing the graphene on the top, and then removing the layer.

KUB F J, ANDERSON T, FEYGELSON B N

Three-terminal junction transistor device for use in e.g. digital circuits, has collector adjacent to side of graphene material base layer, and electrodes connected to and forming electrical connection with emitter, collector and base.

KUB F J