国家/地区 中国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 WANG W（2）
公开年 2012（2）
申请年
专利权人 WANG W（2）

Graphene device structure for use in complementary metal oxide semiconductor device, has semiconductor doped region and graphene layer that are formed as drain region and source region of device structure respectively.

LIANG Q, JIN Z, WANG W, ZHONG H, LIU X, ZHU H, YE T

Radiating device for electronic/photo-electric assembly, has glue part comprising resin and alkene or resin and carbon nanotube, where weight percent of glue part is less than or equal to resin of graphene or carbon nanotube.

WANG W