国家/地区 中国（3）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC
发明人 LI L（3） YU X（3） ZHANG Q（3）
GUO Z（2） WU Y（2）
公开年 2014（3）
申请年 2013（3）
专利权人 WUHAN INST TECHNOLOGY（3）

Preparing composite material used in memory device, involves obtaining water-soluble graphene quantum dot through electrochemical method, and then mixing poly(4-vinylphenol) with poly melamine-co-formaldehyde.

LI L, ZHANG Q, WU Y, PENG L, YU X, GUO Z

Graphene-based water-soluble quantum dots/poly (3,4-ethylenedioxy-thiophene)-poly (styrene sulfonic acid) composite memory storage device, comprises lower electrode which is spin-coated on upper side with water-soluble quantum dots graphene.

LI L, ZHANG Q, YU X, GUO Z, LIU Y

Graphene-based sulfonated/poly (ethylenedioxy-thiophene)-poly(styrene sulfonic acid) composite memory device comprises lower electrode, electro active intermediate layer, and electro active memory layer deposited on upper electrode.

ZHANG Q, ZHAO R, LI L, WU Y, YU X