国家/地区 中国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC H01L031/18（2）
发明人 CHEN X（2） SHAN D（2）
公开年 2018（2）
申请年 2018（2） 
专利权人 YANGZHOU POLYTECHNIC INST（2）

Graphene/silicon structure solar cell manufacturing method, involves locating bottom electrode on lower surface of n-type silicon layer, and introducing oxide layer at Schottky junction interface to modify Schottky junction interface.

SHAN D, ZHOU S, CHEN X

Fermi-adjustable graphene hetero junction structure has graphene layer which is located on upper end portion of rectangular groove, and whose nanometer germanium thin film layer is provided with second rectangular ring shaped gold electrode.

SHAN D, CHEN X