国家/地区 中国（4） 美国（2）
IPC部 B（4） C（4） H（2）
IPC大类 C01（3） C23（3） B07（2）
B82（2） C04（2） H01（2）
IPC小类 C01B（3） C23C（3） B07B（2）
B82Y（2） C04B（2） H01L（2）
IPC B82Y030/00（2） B82Y040/00（2） C01B032/184（2）
C04B035/583（2） C04B035/622（2） C04B035/653（2）
C23C014/06（2） H01L021/02（2）
发明人 YU C（5） HU S C（2） LIN I（2）
SUNG C（2）
公开年 2021（3）
申请年 2021（2） 
专利权人 YU C（5）

Processing graphene particle comprises e.g. extruding and cutting graphene raw material using forming mold, forming graphene particles, heating and drying formed graphene particles by drying device, placing dried into crushing feeding material, crushing and feeding material.

YU C

Method for drying graphene particle, involves starting scraping device to scrape graphene dust adhered to inner wall of tank to bottom of tank, using plugging device for plugging when clogging occurs, and discharging fine graphene particles inside tank together with graphene dust.

YU C

Uniform flow heat insulation device for graphene film growth device, has uniform flow cylinder whose inner portion is provided with steering mechanism, where upper end side wall of uniform flow cylinder is connected with air inlet pipe.

YU C

Forming graphene layer for e.g., LEDs, by mixing carbon source with horizontally oriented molten solvent, precipitating carbon source to form graphite layer across molten solvent, and separating graphite layer into a set of graphene layers.

SUNG C, HU S C, LIN I, YU C

Forming graphene layer used in e.g. transistors, solar panels, involves mixing carbon source with molten solvent, precipitating carbon source from solvent to form graphite layer, and separating graphite layer into several graphene layers.

SUNG C, HU S C, LIN I, YU C, SONG J