国家/地区 韩国（2）
IPC部 B（2）
IPC大类
IPC小类
IPC
发明人 CHOI C G（2） CHOI J S（2） CHUNG K H（2）
KIM J T（2） YOUN D H（2） YU Y（2）
YU Y J（2）
公开年 2014（2）
申请年 2013（2） 
专利权人 YU Y（2）

Transferring graphene to fabricate graphene dual junction diode involves forming graphene layer by composing graphene and base layer; depositing self-assembled monolayer and separating combination layer of monolayer/graphene from base layer.

CHOI J S, YU Y, KIM J T, CHUNG K H, YOUN D H, CHOI C G, YU Y J

Forming graphene pattern, comprises forming fine pattern defined by trench on substrate, providing graphene solution on fine pattern, and selectively forming graphene layer on fine pattern contacting graphene solution.

CHUNG K H, KIM J T, YU Y, CHOI J S, YOUN D H, KIM K, CHOI C G, YU Y J, KIM K C