国家/地区 美国（4） 世界知识产权组织（3）
IPC部 H（4） B（2） C（2）
IPC大类 H01（4） B82（2） C01（2）
IPC小类 H01L（3） B82Y（2） C01B（2）
IPC H01L029/16（3） B82Y030/00（2） B82Y040/00（2）
H01L021/02（2）
发明人 ZHANG Y（4）
公开年 2014（4）
申请年 2014（3） 
专利权人 ZHANG Y（4）

Electronic device using graphene to grow semiconductors, has epitaxial layers of semiconductor material that are grown on defect-free graphene layer disposed on substrate.

ZHANG Y, TSU R, YUE N

Method for growing graphene layer on metal foil for e.g. forming field-effect transistor, involves positioning foil in vessel placed in chamber, introducing hydrogen, annealing foil, introducing methane and depositing carbon on foil.

ZHOU C, ZHANG Y, ZHANG L

Monolayer graphene photodetector manufacturing method involves forming electron trapping center in graphene quantum dot array, which is formed in graphene monolayer.

ZHANG Y, WANG Q

Composition used for removing components from fluids e.g. sewage water and waste water, and for forming capacitor, comprises structure having graphene sheets and carbon nanotubes disposed between graphene sheets.

WEI L, ZHANG Y