国家/地区 美国（2）
IPC部 B（2）
IPC大类 B82（2）
IPC小类
IPC
发明人 ZHOU H（2）
公开年
申请年
专利权人 ZHOU H（2）

Growing graphene used e.g. in graphene material, comprises annealing metal substrate up to growth temperature for annealing time period and in presence of non-reducing gas, and introducing gas mixture to grow graphene over the substrate.

DUAN X, ZHOU H

Preparing silicon intercalated epitaxial monolayer graphene comprises growing large scale high-quality graphene on metal surface, depositing silicon on the prepared epitaxial graphene and annealing to high temperature.

GAO H, PAN Y, GAO M, MAO J, HUANG L, ZHOU H, WANG Y, GUO H, DU S