国家/地区 世界知识产权组织（6）
IPC部 G（5） H（5） C（2）
IPC大类 H01（5） G01（4） C01（2）
IPC小类 H01L（5） C01B（2） G01J（2）
IPC H01L031/112（3） H01L027/144（2） H01L027/146（2）
H01L031/0232（2） H01L031/028（2） H01L031/0352（2）
发明人 ALLEN M（6）
公开年 2017（4）
申请年 2016（3） 
专利权人 NOKIA TECHNO.（5） NOKIA CORP（2）

Graphene-based voltage-mode photosensitive device i.e. photosensitive FET, has photoactive semiconducting material and two-dimensional material configured such that non-screening gate voltage interval is provided.

BESSONOV A, COLLI A, ALLEN M

Apparatus for sensing electromagnetic radiation using graphene, has sensor arranged to detect electromagnetic radiation, where reflective surface is arranged to reflect electromagnetic radiation that is passed through substrate onto sensor.

ALLEN M, HARRIS N

Apparatus for scrambled identification signal of user using quantum dot-graphene field effect transistors (QD-FET), has circuitry which obtains output signals from QD-FET dependent upon light detected by QD-FET and drain-source bias voltage.

ALLEN M, RONNOW T, BITAULD D, BESSONOV A

Apparatus for performing photodetection, has substrate comprising aperture extending through substrate and photodetector positioned overlaying end of aperture, where photodetector comprises graphene functionalised with quantum dots.

ALLEN M

Apparatus within sensing device for sensing chemical analytes within sample, has graphene FET configured such that output provided by FET, in response to pulse of electromagnetic radiation, is dependent upon analyte within sample.

WHITE R, MALIK S, ALLEN M, BAILEY M J A, BAILEY M

Forming graphene oxide-reduced graphene oxide junction used in electronic device, comprises depositing layer of graphene oxide, selectively exposing region of the deposited graphene oxide layer to electromagnetic radiation and repeating.

WEI D, ALLEN M