国家/地区 中国（3） 韩国（2） 美国（2）
IPC部 C（3） H（2）
IPC大类 C23（3） C01（2） H01（2）
IPC小类 C23C（3） C01B（2）
IPC C01B032/186（2） C23C016/26（2）
发明人 AN S（4）
公开年 2020（4）
申请年 2019（2）  2020（2） 
专利权人 SAMSUNG ELEC.（2）

Polyurethane crosslinking reduced graphene oxide composite conductive film used as conductive film in preparation of flexible electronic device, comprises polyurethane and reduced graphene oxide, and formed by cross-linking.

LIANG G, ZHANG J, AN S, BAI S, JU S, LIU J

Graphene-coated aluminum/aluminum-based heat dissipation material comprises evaporated aluminum graphene and pure aluminum.

TANG G, LI D, HU Z, XU W, AN S, YANG X, LIU T, YI W, XU H, QU B, LI J

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Directly growing of carbon material in production of high-quality graphene, involves adsorbing carbons onto substrate by supplying carbons to substrate, and removing unreacted carbon residues from substrate after supplying carbons.

KIM C, SHIN H, BYUN K, SHIN K, LEE C, NAM S, AN S, LEE J, CHO Y, SHIN H J, BYUN K E, SHIN K W, LEE C S, NAM S G, AHN S J, LEE J H, LEE J I, CHO Y C