国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC
发明人 BAI X（3）
公开年 2018（3）
申请年 2018（2） 
专利权人 UNIV GUANGXI.（2）

Preparing fluorine-doped graphene quantum dot comprises decomposing graphene quantum dot, and bismuth difluoride, and bismuth to generate fluorine gas and helium gas, and driving, and entering photochemical reaction chamber.

LIU F, GAO F, KONG W, BAI X, XU X

Preparing chlorine doped graphene quantum dot comprises e.g. producing highly active chlorine radicals under irradiation of ultraviolet light, and carrying out photochemical reaction of graphene quantum dots with chlorine radicals.

GAO F, LIU F, KONG W, XU X, BAI X

Growing graphene on silicon carbide surface useful for graphene and silicon carbide composite catalyst in carbon dioxide photo catalyst reaction of electrolyzed water, comprises pre-treating the silicon carbide powder.

GE R, CHEN W, MA C, BAI X, ZHANG J, WANG B, SONG Y, LI G, SUN Y, WEI W