国家/地区 美国（2）
IPC部 B（2） H（2）
IPC大类 B29（2） H01（2）
IPC小类 B29C（2） H01L（2）
IPC B29C065/48（2） B29C065/54（2） H01L023/373（2）
发明人 BENINI L（2）
公开年
申请年
专利权人 STMICROELECT.（2）

Forming method of microstructure device such as integrated circuits involves providing thermally conductive filler material including graphene flakes, between microstructure device chip and substrate.

SCURATI M G, CERIATI L, BENINI L

Microstructure device e.g. integrated circuit device of semiconductor device, has intermediate heat transfer layer which is positioned between surface of substrate and microstructure device chip and is provided with graphene flakes.

SCURATI M G, CERIATI L, BENINI L