国家/地区 世界知识产权组织（7）
IPC部 C（5） B（3） H（2）
IPC大类 C01（5） B60（2） H01（2）
IPC小类 C01B（5） B60L（2） H01R（2）
IPC C01B031/04（3） B60L053/16（2） H01R013/03（2）
H01R013/11（2）
发明人 BI H（7）
公开年 2021（2）
申请年 2021（2） 
专利权人 CHANGCHUN JE.（2） UNIV SOUTHEA.（2）

Electric energy transmission switching mechanism of charging socket for motor vehicle, has switching portion whose one end is electrically connected to connection end, other end is electrically connected to conductive core at one end of cable, and bending portion that includes bending area.

MIAO Y, BI H, WANG C

Memory function featured terminal, has terminal main body provided with memory contact section that is provided with contact claws at intervals along circumferential direction, and inner convex unit fixed with outer end of contact claw.

WANG C, BI H

Graphene quantum dots and gadolinium ion chelate uses to prepare medical image developer, comprises nanomaterials with dendritic morphology formed by coordination and self-assembly of graphene quantum dots and gadolinium ion.

BI H, WANG D

Formation of graphene film on substrate e.g. glass, involves depositing graphene on surface of substrate to form graphene crystal layer, depositing graphene oxide layer on layer, and depositing graphene on resulting composite layer.

BI H, HUANG F, LIU X, SONG Z, TANG Y, XIU T

Preparing graphene-metal chalcogenide porous material used in e.g. water treatment, involves adding metal precursor and chalcogenide precursor to dispersion comprising graphene oxide, heating obtained mixture and freeze-drying gel.

ZHANG H, BI H, CHEN B, MA Q

Preparation of graphene thin film used for coating involves adding graphite oxide in solvent, ultrasonic dispersing to form graphene oxide dispersion liquid, placing substrate on heating platform, and heating dispersion liquid on substrate.

WAN S, BI H, HE L, XU F, WU X, XIE X, YIN K, SUN L, XIE R

Graphene casting by pouring graphene oxide dispersion in hydrothermal reactor cup, adding ammonia or sodium hydroxide, heating to obtain graphene gel, and drying.

BI H, SUN L, XU F, WAN N, YIN K