国家/地区 中国（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B031/04（2）
发明人 CAO B（2）
公开年
申请年 2014（2）
专利权人

Manufacture of n-doped graphene used for manufacturing electrical components, involves exposing graphene to ammonium fluoride, leading to formation of fluorine layer on portion of surface of graphene layers.

BONG J H, CHO B J, SUL O, YOON H A, ALEXANDER Y H, SUL W J, CAO B, FENG Z, XUE W, CHO B, BONG J

Manufacturing graphene oxide, comprises e.g. performing electrochemical reaction using anode with flake graphite sheet and sulfuric acid aqueous solution, collecting anode with expanded flake graphite sheet, and washing with deionized water.

CAO B, MENG Q, XU T