国家/地区 台湾（7）
IPC部 H（4） G（3） C（2）
IPC大类 H01（4） C01（2）
IPC小类 H01L（3） C01B（2）
IPC C01B032/184（2）
发明人 CHANG J（7）
公开年 2022（4）
申请年 2021（3） 
专利权人 TEAM GROUP I.（2）

Dye-sensitized solar cell for use in e.g. buildings, has counter electrode arranged opposite to working electrode, and electrolyte located between working electrode and counter electrode.

CHOU J, CHANG J, LIN Y, LAI C, NIEN Y, KUO P

Graphene sticker for use in electronic device, has graphene layer including opposite first side and second side, where first side contacts and completely covers back side of printable layer, and adhesive layer placed on second side of layer.

CHEN K T, MA H, CHUANG T H, CHANG J

Electrode for lithium battery, has negative electrode material that is arranged on collector plate, and is provided with silicon, silicon nitride, graphite, graphene, carbon nanotubes, carbon nano-fibers, and carbon nanoparticles.

CHEN C, CHEN F, HSU W, WU W, CHANG J

External solid-state hard disk, has solid state hard disk box that contacts graphene heat-dissipating fin, so that heat energy generated by solid state disk case is sequentially transmitted through heat conducting sheet and graphene heat sink.

CHEN K T, TSAI H, MA H, CHANG J

Large-area graphene transfer device, has transfer substrate provided with graphene layer on transfer substrate, and transfer composite layer provided on graphene layer, where adhesion force between graphene layer and transfer composite layer is smaller.

SU C, CHANG J, HUNG Y, HSIEH Y, HUANG C

Method of making a pellicle for use in extreme ultraviolet (EUV) lithography system, by depositing graphene layer over first material layer, and depositing amorphous silicon layer over graphene layer.

TU C, CHEN C, YOO C S, CHANG J, TSAI C, LIU P, LEE H, LIN C, LIN Y, TU Z, CHEN J, CAI J, YOU Q, ZHANG Z, LIN Z, LIU B, LI X, YOO C

FET formation by depositing channel material comprising graphene or nanostructure on substrate, depositing contact material over channel material, gate, and spacers, and patterning contact material to form self-aligned contact for FET.

CHANG J, LAUER I, SLEIGHT J, CHANG J B