国家/地区 中国（3）
IPC部 C（2）
IPC大类 C23（2） C30（2）
IPC小类 C23C（2） C30B（2）
IPC C23C014/18（2） C23C014/35（2） C23C014/54（2）
C30B025/18（2）
发明人 CHANG K（3）
公开年 2022（2）
申请年 2021（3）
专利权人 UNIV HENAN（2）

Preparing single crystal graphene/two-dimensional cuprous telluride heterojunction surface-enhanced Raman spectroscopy substrate useful in surface-enhanced Raman spectroscopy, comprises etching copper film on single-crystal graphene, heating in tellurium source and molecular sieve and reacting.

CHANG K, HUANG M, WANG H, CHEN K

Preparing high-rate three-dimensional porous silicon-niobium-based oxide composite thin film cathode material involves mixing graphene water-based slurry and binder, dispersing, coating slurry on three-dimensional porous current collector material, vacuum drying, co-sputtering with elemental silicon.

WANG J, CHANG K, WAN W, ZHOU H, LIU P

Preparing one-dimensional single crystal germanium-based graphene plasmon nanostructure in e.g. mid-infrared sensing, comprises sputtering gold nano-film on substrate, and growing high crystallinity graphene shell layer on surface of germanium doped single crystal nano-wire.

WANG H, GU Y, CHANG K, CHEN K