国家/地区 中国（4）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（2）
IPC
发明人 CHEN Y（4）
公开年 2010（4）
申请年 2010（3） 
专利权人 CHINESE ACAD.（2） CHINESE ACAD.（2） UNIV CHINA E.（2）

Preparation method for polypyrrole/graphene composite material involves pressing mixture on current collector to form electrode material of such energy storage systems as super capacitor.

ZHANG D, YU P, MA Y, CHEN Y, ZHANG X

Graphene field effect transistor comprises a substrate gate, a lower gate dielectric material, graphene, a source and a drain electrode, where the lower gate dielectric material is positioned on the surface of the substrate gate.

LI Y, LIU X, CHEN Y, WANG Z, HAO X

Transferring of graphene thin film for graphene semiconductor device involves coating organic colloid layer on surface of graphene thin film through spin coating and drying organic colloid layer coated on surface of graphene tin film.

CHEN Y, LIU X, LI Y, WANG Z

Preparation of graphene colloid and graphene poly-para-phenylenediamine composite material involves preparing red graphene colloid, filtering prepared colloid, washing and adding obtained wet powder of graphene into ethanol.

CHEN Y, MA Y, YU P, ZHANG X