国家/地区 中国（5）
IPC部 C（3） H（2）
IPC大类 C01（2） H01（2）
IPC小类 C01B（2） H01L（2）
IPC H01L029/78（2）
发明人 CHEN Z（5）
公开年 2012（5）
申请年 2012（5）
专利权人 BEIJING ZHON.（2） UNIV CHANGZH.（2）

Silicon stone graphene FET has source region and drain region of FET are located on graphene layer in channel area which is formed between source region and drain region.

CHEN Z, KUANG W, LIU X, TANG Z

High-hydrogen storage composite material used e.g. in fuel cell hydrogen supply source comprises reduced graphene oxide material, which has surface with dense pores, in which lithium borohydride material is uniformly dispersed.

CAO J, CHEN Z, WANG W, XU J, QI Z

Bismuth-oxygen-iodine-graphene composite visible light catalyst comprises bismuth-oxygen-iodine and graphene.

CAO W, CHEN Z, LIU H, SU Y

Hydrothermal preparation of graphene comprises dipping expanded graphite in calcium chloride aqueous solution, dropping urea, transferring suspension solution, taking polytetrafluoroethylene as substrate, and dispersing into alcohol.

CHEN Z, FU M, ZHU Y

Silicon stone graphene field effect transistor, has source region and drain region arranged on graphite layer, channel arranged between source region and drain region, and low resistivity silicon layer arranged on silicon carbide substrate.

CHEN Z, KUANG W, LIU X, TANG Z