国家/地区 韩国（2）
IPC部
IPC大类
IPC小类
IPC
发明人 CHO B J（2）
公开年 2011（2）
申请年 2010（2） 
专利权人 KOREA ADV IN.（2）

Manufacturing method of flexible resistance switching memory device e.g. RAM, involves forming graphene oxide layer by mixing methanol and water and arranging on bottom electrode layer on printed circuit board.

CHO B J, HONG S K

Forming a graphene layer used in e.g. electric devices, or transparent electrodes involves forming metal thin film on substrate; injecting carbon ions into the thin film; and heat-treating the carbon ions injected into the thin film.

CHO B J, MUN J H