国家/地区 韩国（8） 世界知识产权组织（5） 美国（2）
IPC部 H（4） G（3） B（2）
C（2）
IPC大类 H01（4） G01（3） C01（2）
IPC小类 G01N（3） C01B（2） H01L（2）
H01M（2）
IPC G01N027/414（3） C01B032/194（2） G01N027/30（2）
H01M004/587（2） H01M004/62（2）
发明人 CHO M（8）
公开年 2022（5） 2023（2）
申请年 2021（6） 
专利权人 MCK TECH CO .（5） IND SCI TEC.（2） KUMOH NAT IN.（2） POSCO（2）

Manufacturing graphene composite structure by forming support body having observation unit corresponding to observation area and frame unit, and forming hydrophilic protective layer on upper surface of graphene layer by applying energy to graphene layer onto which organic component is transferred.

CHO S M, CHO M G, OH H G, CHO M, OHHONGGI

Wrinkle flattening unit for flattening wrinkles present in graphene composite structure, has rotation portion that comprises outer rotation unit having multiple suction holes communicating with branch passage and supporting one surface of composite structure.

CHO S M, CHO M G, OH H G, CHO M, OHHONGGI

Transistor-type biosensor for measuring concentration of target material, has sensing unit for measuring electrical signal of analysis solution containing target substance, where control electrode unit is electrically connected to sensing unit.

SONG K S, CHO M, OHHONGGI

Negative electrode active material used for negative electrode for lithium secondary battery, comprises silicon-carbon composite comprising silicon nanoparticles, and carbon matrix.

YOU S J, PARK S J, KANG E, KIM Y J, WOO J G, CHO M, PARK S, YOO S J, WOO J, PARK S E

Method for manufacturing ion detection sensor, involves applying ion-sensitive mixed layer preparation solution so as to cover portion of upper portion of source electrode and drain electrode to provide ion-sensitive mixed layer that responds to target ions.

CHO S M, CHO M G, KIM K S, OH H G, CHO M, OHHONGGI

Reference electrode for ion measurement sensor, has graphene containing fluorine functional group treated with fluorine-benzene, and graphene is non-oxidized graphene or reduced graphene oxide.

CHO S M, CHO M G, KIM K S, OH H G, SONG K S, JO D A, CHO H S, CHO M, OHHONGGI, DAAE J, HAESHIN J

Wiring structure for use in semiconductor device, has first conductive pattern, ohmic contact pattern, oxidation prevention pattern, diffusion barrier, and second pattern sequentially stacked in stated order on substrate.

JEONG G, LEE S, YOON J, YAMAMOTO K, SHIN H, BYUN K, CHO M, LIM H, ZHENG G, LI Z, YOUN J, SHAN B, SHEN X, LIM H S, JO M, BYUN K E, SHIN H J, SU Y J, LEE S Y, JUNG K O

Negative electrode for lithium secondary battery, has artificial graphite-based active material, where artificial graphite-based active material is provided with artificial graphite with graphitization degree of ninety percent or greater.

EUNKYUNGKIM, CHO M