国家/地区 美国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 CHUNG H（2）
公开年
申请年
专利权人 WOO Y（2）

Manufacture of graphene for fabricating electronic device and display device, involves forming silicon carbide thin film on substrate, forming metal thin film on silicon carbide thin film, and heating to obtain metal composite layer.

LEE D W, SHIN H, PARK S, BYUN K, SEO D, SONG H, WOO Y, LEE J, CHUNG H, HEO J, SHIN H J, PARK S J, BYUN K E, SONG H J, WOO Y S, LEE J H, CHUNG H J, HEO J S

Graphene device, preferably inverter, includes upper oxide layer on embedded gates, and graphene channel and electrodes on upper oxide layer.

HEO J S, SEO S, KIM D, WOO Y, CHUNG H