国家/地区 中国（3）
IPC部 C（3）
IPC大类 C23（2）
IPC小类 C23C（2）
IPC C23C016/02（2）
发明人 DENG R（3）
公开年 2017（3）
申请年 2015（3）
专利权人 SHANGHAI INS.（3）

Preparing copper substrate based on cleaning process for manufacturing chemical vapor deposition graphene, involves providing copper substrate for preparing graphene, and then treating copper substrate in aerobic environment.

ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R

Dry transfer of graphene metal substrate comprises placing long graphene metal substrate on target substrate, heating under protective atmosphere at melting temperature or more and cooling to room temperature.

ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R

Dry cleaning of copper substrate for preparing chemical vapor deposited graphene, involves subjecting copper substrate to aerobic atmosphere for oxidation to form oxide layer and removing oxide layer from surface of substrate.

ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R