国家/地区 中国（4）
IPC部 C（3）
IPC大类
IPC小类
IPC
发明人 DI Z（4）
公开年 2014（3）
申请年 2014（4）
专利权人 SHANGHAI INS.（3）

Doped graphene preparing method, involves forming nickel thin film layer on copper substrate, and N-type graphene and P-type doped graphene formed respectively on N-type doped element-rich area and P-type doped element-rich zone.

DI Z, CHEN D, DING G, GUO Q, MA J, WANG G, XIE X, XUE Z, ZHANG M, ZHENG X, DAI J

Preparation of single-crystal graphene domain involves performing chemical vapor deposition on specific-plane of semiconductor material as catalytic substrate using gaseous or solid carbon.

DI Z, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J, WANG Z

Preparing diphenyl ether compound comprises mixing halogenated benzene compound, phenolic compound, alkali and tetrahydrofuran, adding cuprous oxide, ultrasonically dispersing the mixture in the presence of a graphene catalyst and heating.

GUO X, DI Z

Promoting osteogenesis useful for preparing medicine for treating bone defects and osteoporosis, and exhibiting anti-cancer and anti-aging effect, involves using germanium-graphene.

XIE X, ZHANG M, LI J, YE L, LIU X, DI Z, CHEN D, DING G, GUO Q, WANG G