国家/地区 中国（3）
IPC部 C（2）
IPC大类 C01（2） C23（2）
IPC小类 C01B（2） C23C（2）
IPC C01B031/04（2） C23C016/26（2）
发明人 DI Z（3）
公开年 2012（2）
申请年 2012（2） 
专利权人 CHINESE ACAD.（3） SHANGHAI INS.（3）

Graphene modulated high-k metal gate germanium-based MOS device manufacturing method, involves forming graphene thin film on Germanium-based substrate, and forming high-k gate dielectric on surface metal electrode.

DI Z, WANG G, WANG X, ZHANG M, ZHENG X

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X

Growing graphene, comprises growing graphene on surface of catalyst using carbon source through chemical vapor deposition, or growing graphene on catalyst surface and interface of catalyst contacting with substrate.

DI Z, DING G, GONG Q, JIANG M, SUN L, WANG S, XIE X, ZHU Y