国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B031/04（2）
发明人 DING G（3）
公开年 2012（3）
申请年 2012（2） 
专利权人 CHINESE ACAD SCI SHANGHAI MICROSYSTEMS（3）

Bandgap opening in graphene, comprises e.g. placing the graphene on silicon chip, introducing into ion implanter, bombarding the graphene on silicon sheet by using ion beam to produce defective product, and performing annealing treatment.

CHEN D, DI Z, DING G, WANG G, XIE X, ZHANG M

Method for growing graphene through chemical vapor phase deposition, involves using poly-benzene ring aromatic hydrocarbons as carbon source and using carbon source decomposition method or spin-coating method of carbon source.

DING G, JIANG M, SHEN H, SUN L, TANG S, WU T, XIE X

Method for gradually thinning graphene to obtain graphene nano structure, involves removing top layer of multilayer graphene by anisotropy oxidation process, annealing and processing multi-plasma treatment and high temperature annealing.

DING G, JIANG M, XIE X, YANG X