国家/地区 中国（7）
IPC部 C（4） H（4）
IPC大类 H01（4） C01（2） C09（2）
IPC小类 H01M（3） C01B（2） H01G（2）
IPC C01B032/184（2） H01G011/86（2）
发明人 DING J（8）
公开年 2017（8）
申请年 2017（4）  2016（3） 
专利权人

Preparing high-capacity composite material involves weighing graphene oxide solution, dispersing ultrasonically, adding hydrogen peroxide and nitrogen source, and dispersing uniformly to obtain nitrogen-containing oxide graphene solution.

DING J

High photoluminescence performance graphene-porous silicon material comprises graphene which is covered on porous silicon to form composite structure.

GE D, ZHANG L, QIAN D, CHENG G, DING J

Preparation of graphene type anticorrosive paint by adding graphene oxide into water or oily solvent, ultrasonically dispersing to obtain dispersion liquid, adding graphene in dispersion liquid and ultrasonically dispersing.

YU H, ZHOU N, DING J, CHEN H

Graphene material speed-based thermal physiotherapeutic closestool gasket, has graphite heating sheet embedded between gasket layer and cushion cover plate, and pressure sensor connected with switch controller.

DING J

Method for manufacturing cobalt-iron alloy/graphene composite material i.e. utilized as electrode material in super capacitor, involves dispersing oxidized graphene in water, dissolving cobalt acetate tetrahydrate and calcinating.

LIU Y, CHEN N, LI Y, DING J, WU H, SU Y, LI B, LIU Z, LU S

Electrical energy storage device for high energy and high power delivery, in which one of anode and cathode comprises separate shells of legume or nut treated with macroscopcially open structure of graphene or carbon nanosheets.

MITLIN D, DING J, LI Z

Preparation of nitrogen-doped graphene comprises preparing graphene oxide in ammonia water solution, sonicating, centrifuging, washing, and drying.

SUN Z, YAO H, DING J, ZHANG Y, MA T, GAO Y

Preparation of modified phenolic resin used for in-situ generating graphene, by uniformly stirring phenolic compound, aldehyde compound and acid catalyst, reacting, adjusting pH, adding acetic acid and transition metal salt, and reacting.

WU L, DING J, CHENG J, TONG K, CHENG S, CHEN Y, LI Z, ZHANG Q, LIU Y, RAO W, YAN L, LI Y