国家/地区 中国（4）
IPC部 C（3）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC
发明人 DONG G（4）
公开年 2017（3）
申请年 2016（4）
专利权人 CHANGZHOU GU.（2）

Preparing hexagonal boron nitride and graphene composite film material involves dissolving carbon capability as growth substrate, boron and nitrogen as precursor containing gas under condition of vacuum and high temperature.

DONG G, TANG Q

Graphene thin film transfer method comprises preparing graphene thin film on initial substrate, coating conductive adhesive layer, transferring to target substrate via electrochemical method, and cleaning.

DONG G, ZHANG T, TANG Q

Chemical vapor deposition apparatus for preparing thin film materials e.g. graphene, has main chamber that is for preparation of film material, and subchamber is for scouring of boron source.

DONG G, ZHANG X, TANG Q

Oral denture material comprises polymethylmethacrylate and fluorinated graphene.

ZHANG J, YAN Z, LIU B, DONG G, SUN L, DUAN Y