国家/地区 欧洲专利局（EPO）（3）
IPC部 C（3）
IPC大类 C01（2） C30（2）
IPC小类 C01B（2） C30B（2）
IPC C01B031/04（2） C30B029/02（2）
发明人 DONG G（3）
公开年 2013（2）
申请年 2013（2） 
专利权人 DONG G（2） RIJKSUNIV LE.（2）

Preparation of graphene, involves mixing inorganic salt with phthalocyanine material uniformly, splitting and separating under protecting gas to obtain highly plane oriented graphene material.

SUN X, WANG Y, DONG G

Formation of graphene film on surface of substrate for, e.g. lasers, involves locating carbon source at substrate surface, controlling ambient conditions to inhibit nucleation, and then initiating graphene nucleation at localized site.

DONG G

Method for forming graphene film used for e.g. flexible electronics application, involves heating copper-containing substrate, exposing substrate to carbon-containing precursor gas to dissolve carbon atoms into substrate, and cooling.

DONG G, VAN RIJN R