国家/地区 世界知识产权组织（5） 中国（4） 美国（3）
IPC部 B（6）
IPC大类 B82（6）
IPC小类 C01B（6）
IPC B82Y040/00（4） B82Y030/00（3） C01B031/04（3）
B82B001/00（2） C01B021/064（2） C01B031/02（2）
发明人 DUAN X（6）
公开年 2017（2）
申请年 2016（2） 
专利权人 UNIV CALIFOR.（3） GUANGDONG NA.（2）

Use of fullerene as cuprous stabilizer in preparation of fullerene-stabilized cuprous functional material for catalysts, energy storage batteries, sensors or preparation of bactericidal and antiviral medicine.

XIE S, ZHENG J, LIU X, HUANG L, CUI C, CHEN Z, YUAN Y, ZHU C, DENG S, LIN H, DUAN X, YANG T, TIAN H, LIN M, DENG L, ZHANG Q, ZHENG L

Preparation of white graphene dispersion, involves mixing hexagonal boron nitride powder, surfactant and solvent, grinding, placing obtained mixture in ball mill, ball milling, washing obtained powder with alcohol and drying.

DUAN X, JIANG H, WANG J

Method for high-speed dispersion of white graphene, involves mixing white graphene powder, surfactant and dispersion medium, stirring, reducing temperature using ice water , grinding to obtain powder, washing powder with alcohol and drying.

DUAN X, JIANG H, WANG J

Formation of graphene-based material used as supercapacitor electrodes, involves treating mixture comprising etchant and graphene oxide sheets, dispersing holey sheets into solvent and treating dispersion.

DUAN X, XU Y, HUANG Y

Growing graphene used e.g. in graphene material, comprises annealing metal substrate up to growth temperature for annealing time period and in presence of non-reducing gas, and introducing gas mixture to grow graphene over the substrate.

DUAN X, ZHOU H

Graphene nanomesh for forming transistor, sensor, and graphene structure, comprises sheet of graphene having periodically arranged apertures, where the apertures have a substantially uniform periodicity and substantially uniform neck width.

DUAN X, HUANG Y, BAI J