国家/地区 美国（3）
IPC部 B（3）
IPC大类 B82（3）
IPC小类 C01B（3）
IPC C01B031/04（3） B82B001/00（2） B82Y030/00（2）
B82Y040/00（2） C01B031/02（2）
发明人 DUAN X（3）
公开年
申请年
专利权人 UNIV CALIFOR.（3）

Formation of graphene-based material used as supercapacitor electrodes, involves treating mixture comprising etchant and graphene oxide sheets, dispersing holey sheets into solvent and treating dispersion.

DUAN X, XU Y, HUANG Y

Growing graphene used e.g. in graphene material, comprises annealing metal substrate up to growth temperature for annealing time period and in presence of non-reducing gas, and introducing gas mixture to grow graphene over the substrate.

DUAN X, ZHOU H

Graphene nanomesh for forming transistor, sensor, and graphene structure, comprises sheet of graphene having periodically arranged apertures, where the apertures have a substantially uniform periodicity and substantially uniform neck width.

DUAN X, HUANG Y, BAI J